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ECO-PACTM 2 IGBT Module PSIG 160/12 PSIS 160/12* PSSI 160/12* IC25 = 169 A VCES = 1200 V VCE(sat)typ. = 2.9 V
Short Circuit SOA Capability Square RBSOA
Preliminary Data Sheet
AC 1
X15 NTC X16 L9 F1
IK 10
LMN S
A IJK
L9 T16 X15 NTC IK 10
PSIG 160/12 IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C
X16
AC 1
PSIS 160/12*
PSSI 160/12*
Maximum Ratings 1200 20 169 117 200 VCES 10 694 V V A A A s W
*NTC optional
Features
VGE = 15 V; RG = 6.8 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 6.8 ; TVJ = 125C non-repetitive TC = 25C Conditions
* * * * * * * * * * * * * * * *
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.9 3.3 4.5 3.5 6.5 6 19 400 100 60 600 90 16.1 14.6 6.5 0.36 V V mA mA nA ns ns ns ns mJ mJ nF
Applications
AC and DC motor control AC servo and robot drives power supplies welding inverters
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 160 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight Leads with expansion bend for stress relief
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 100 A VGE = 15/0 V; RG = 6.8
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. 0.18 K/W Users should observe proper ESD K/W handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
Reverse diodes (FRED)
Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 154 97 A A Package style and outline
Dimensions in mm (1mm = 0.0394")
Symbol VF IRM trr RthJC RthJH
Conditions IF = 100 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Characteristic Values min. typ. max. 2.3 1.7 79 220 0.9 2.7 V V A ns 0.45 K/W K/W
PSIG
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
PSSI
Module
Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Symbol dS dA Weight
Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink)
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
250
A IC
TJ = 25C
250
VGE=17V 15V 13V 11V
A 200 IC 150 100
TJ = 125C
VGE=17V 15V 13V 11V
200 150 100 50 0 0,0
9V 9V
50 0 0,0
156T120
156T120
0,5
1,0
1,5
2,0
2,5 VCE
3,0 V
0,5
1,0
1,5
2,0
2,5 3,0 VCE
3,5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
250
A
VCE = 20V TJ = 25C
300 A 250 IF 200 150
TJ = 125C TJ = 25C
200
IC
150 100 50 0
156T120
100 50 0 0,5
156T120
5
6
7
8
9
10 VGE
11 V
1,0
1,5
2,0
2,5 VF
3,0 V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
120
20 V
VGE 15
300
ns
trr
VCE = 600V IC = 100A
A IRM
trr
80
200
10 40 5
IRM TJ = 125C VR = 600V IF = 100A
100
0
156T120
0
100
200
300
400
QG
500 nC
0
156T120
0
200
400
600
800 A/s -di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 160/12
40
mJ Eon td(on) Eon 120 ns tr 90 t 60
40
mJ Eoff 30 td(off) Eoff
VCE = 600V VGE = 15V
800 ns 600 t 400
30
20
VCE = 600V VGE = 15V
20
10
RG = 6.8 30 TJ = 125C
156T120
10
RG = 6.8 200 TJ = 125C
156T120
0
0
50
100
150
IC
200 A
0
0
tf
0
50
100
150 IC
200 A
0
Fig. 7 Typ. turn on energy and switching times versus collector current
50 40
Eon 300 ns 240 t 180 120 60
156T120
Fig. 8 Typ. turn off energy and switching times versus collector current
25
mJ Eoff 1500 ns 1200 t 900 600 300
156T120
mJ V = 15V GE
IC = 100A TJ = 125C
VCE = 600V
Eon td(on) tr
20 15 10 5 0
VCE = 600V VGE = 15V IC = 100A TJ = 125C
td(off) Eoff
30 20 10 0
0
8
16
24
32
40
RG
48 56
0
tf
0
8
16
24
32
RG
40
48 56
0
Fig. 9 Typ. turn on energy and switching times versus gate resistor
240
A 1 K/W 0,1 ZthJC
RG = 6.8 TJ = 125C VCEK < VCES
Fig.10 Typ. turn off energy and switching times versus gate resistor
200
ICM
160 120 80 40 0
156T120
0,01 0,001 0,0001
diode
IGBT
single pulse
VDI...160-12P1
0
200
400
600
800 1000 1200 V
VCE
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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